We have calculated the band structures for strained segmented nanowires involving all combinations of AlN, GaN, InN, AlP, GaP, AlAs, GaAs, InP, InAs, AlSb, GaSb, and InSb, as a function of segment length. This was done for two different growth directions of the wires, [100] and [111]. Both the Γ and the X conduction band minima were included in the calculations as well as the three valence bands. Short segments behave like strained quantum wells and our results thus include strained quantum wells as a subset. We find all material combinations that give metallic segments due to a negative band gap and we find all the band alignments that may occur. We identify the structures that have spontaneous charge separation as well as the structures which are suitable for the optical generation of polarised exciton gases, with their rich phase diagram, theoretically predicted to include superfludids and supersolids.
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